Class-E GaAs HBT power amplifier with passive linearization scheme for mobile wireless communications

Class-E power amplifier and its linearization using analog predistortion

In this paper, power amplifier operating with center frequency of 947.5 MHz, which can be used for the transmitter in beamforming systems, is proposed. The power amplifier implemented provides high power added efficiency (PAE) of 71.967% and low noise figure (NF) as low as 1.525. The linearity of the power amplifier is improved by using square law and cubic law analog predistortion techniques. ...

Power Amplifier Linearization Using Six-port Receiver for DVB-S2 Satellite Communications

A digital look-up table adaptive predistortion technique using a six-port receiver for power amplifier linearization is presented. The system is designed in Ka-band for a DVB-S2 satellite link. We use a six-port receiver at the linearizationloop in place of classic heterodyne receivers. The six-port receiver is implemented by the use of passive microwavecircuits and detector diodes. This approa...

A Class E Power Amplifier with Low Voltage Stress

A new output structure for class E power amplifier (PA) is proposed in this paper. A series LC resonator circuit, tuned near the second harmonic of the operating frequency is added to the output circuit. This resonator causes low impedance at the second harmonic. The output circuit is designed to shape the switch voltage of the class E amplifier and lower the voltage stress of the transistor. T...

DESIGN AND SIMULATION OF A GaAs HBT POWER AMPLIFIER FOR WIDEBAND CDMA WIRELESS SYSTEM

Microwave Class-F InGaP/GaAs HBT Power Amplifier Considering up to 7th-Order Higher Harmonic Frequencies

f0 Ideal Abstract The first realization of a class-F InGaP/GaAs HBT amplifier considering up to 7th-order higher harmonic frequencies, operating at 1.9 GHz, is described. For a class-F amplifier design in microwave frequency ranges, not only increasing the number of treated harmonic frequencies, but also decreasing quantities of intrinsic and parasitic elements in a transistor is important. Mea...